hi-sincerity microelectronics corp. spec. no. : he200904 issued date : 2009.08.17 revised date : page no. : 1/4 HST12 hsmc product specification HST12 triac 600v,12a description passivated, sensitive gate triacs in a pl astic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. to-220ab pin configuration pin description 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 123 tab symbol t2 t1 g limtiing values symbol parameter min. max. units v drm repetitive peak off-state voltages - 600 v i t(rms) rms on-state current - 12 a i tsm non-repetitive peak on-state current(f=50hz,tp=20ms) - 120 a i 2 t i 2 t for fusing (it=10ms) - 78 a 2 s di t /dt repetitive rate of rise of on -state current after triggering (f=50hz,ig=50ma,dig/dt=0.1us) - 50 a/us i gm peak gate current(tp=20us,tj=125 c) - 4 a p g(av) average gate power (tj=125 c) - 1 w ts t g storage temperature range -40 150 c tj operating junction temperature -40 125 c
hi-sincerity microelectronics corp. spec. no. : he200904 issued date : 2009.08.17 revised date : page no. : 2/4 HST12 hsmc product specification electrical characteristics (ta=25 c, unless otherwise stated,) rank min rank max symbol parameter quadrant c b c b unit i - ii - iii 25 50 ma i gt gate trigger current (v d =12v) iv 50 100 ma i - iii- iv 40 50 ma i l latching current (i t =1.2 i gt ,tj=25 c) ii 80 100 ma i h holding current(i t =0.1a,) all 25 50 ma v tm on-state voltage (i t =8.5a,) 1.55 v v gt gate trigger voltage (v d =12v, tj=25 c) 1.3 v off-state leakage current t c =25 c 10 ua i d (v d = v drm (max)) t c =125 c 1 ma critical rate of rise of off-state voltage dv d /dt v dm =400vtj= 125 c; exponential waveform; gate open circuit 200 400 v/us thermal resistances symbol parameter min. typ max. unit rth j-c thermal resistance junction to mounting base 1.4 c/w
hi-sincerity microelectronics corp. spec. no. : he200904 issued date : 2009.08.17 revised date : page no. : 3/4 HST12 hsmc product specification to-220ab dimension dim min. max. a 5.58 7.49 b 8.38 8.90 c 4.40 4.70 d 1.15 1.39 e 0.35 0.60 f 2.03 2.92 g 9.66 10.28 h - *16.25 i - *3.83 j 3.00 4.00 k 0.75 0.95 l 2.54 3.42 m 1.14 1.40 n - *2.54 o 12.70 14.27 p 14.48 15.87 *: typical, unit: mm a b e g i k m o p 3 2 1 c n h d tab f j l 3-lead to-220ab plastic package hsmc package code: e marking: note: green label is used for pb-free packing pin style: 1. main terminal 1 2 & tab. main terminal 2 3.gate material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.):3f, no.72, sec. 2, nanjing e. rd., zhongshan dist., tai pei city 104, taiwan (r.o.c.). tel: 886-2-25212056 fax: 886-2-25632712, 25368454
hi-sincerity microelectronics corp. spec. no. : he200904 issued date : 2009.08.17 revised date : page no. : 4/4 HST12 hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices figure 1: temperature profile t p profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 5sec 1sec pb-free devices. 260 o c +0/-5 o c 5sec 1sec t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 temperature t 25 o c to peak time
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